采用Au/Ta/Ti金属键合层气相吸进简化真空封装工艺

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598438

S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi

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引用次数: 0

摘要

为改进真空封装工艺，研制了Au/Ta/Ti金属多层膜。在200°C脱气和300°C吸收气体分子后，使用该多层材料成功地演示了晶圆级封装。与以往使用Au/Pt/Ti层的研究相比，气体捕集的活化温度更低。

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Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer

Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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