Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598380

H. Nagai, K. Kawamura, Y. Sakaida, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang

引用次数: 0

Abstract

We successfully fabricate a Ga2O3/3C-SiC direct bonding by the surface-activated bonding (SAB) of 3C-SiC epitaxial layer grown on Si substrate to Ga2O3 substrate. The structure of bonding interface will be investigated by transmission electron microscope (TEM).

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高效表面散热的Ga2O3/3C-SiC直接键合制备

通过在Si衬底上生长的3C-SiC外延层与Ga2O3衬底的表面活化键合(SAB)，成功制备了Ga2O3/3C-SiC直接键合。用透射电子显微镜(TEM)研究了键合界面的结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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