Fabrication of InP/SiC structure using surface activated direct bonding

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598366

Y. Fan, T. Maekawa, K. Watanabe, R. Takigawa

引用次数: 0

Abstract

Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.

查看原文本刊更多论文

表面活化直接键合制备InP/SiC结构

磷化铟(InP)基电子器件与碳化硅(SiC)散热器的结合有利于热管理。在本研究中，在室温下使用表面激活直接键合的方法证明了InP/SiC结构。通过切割试验和拉伸试验对粘结质量进行评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

自引率

0.00%

发文量