Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films

Abstract

Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10⁻⁶ Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 10³ s, which differed from behavior observed using Ti films.