非晶硅薄膜原子扩散键合中表面污染对键合性能的影响

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598433

T. Amino, M. Uomoto, T. Shimatsu

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引用次数: 0

摘要

研究了20 nm厚非晶硅薄膜的室温键合，研究了在真空1.0 × 10−6 Pa条件下薄膜沉积与键合之间等待时间tw的函数关系。在tw大于3.6 × 103 s时，结合强度突然下降，这与用Ti薄膜观察到的行为不同。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films

Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10⁻⁶ Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 10³ s, which differed from behavior observed using Ti films.

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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