用气团离子束用有机酸蒸气键合金属薄膜的表面制备

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598403

S. Hanahara, N. Toyoda

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引用次数: 0

摘要

研究了气团离子束(GCIB)与有机酸蒸汽的低温结合。GCIBs诱导表面平滑和表面反应增强，而不会造成严重损伤。因此，表面活化键合(SAB)具有广阔的应用前景。在本研究中，在GCIB辐照过程中引入有机酸蒸汽，以帮助去除金属膜(如Cu, Ni)上的表面氧化物。XPS研究表明，通过吸附有机酸的反应，NiO层被选择性去除。利用该技术进行的初步键合实验显示了Cu-Cu键合的良好效果。

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Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding

Low temperature bodings of Cu by gas cluster ion beam (GCIB) irradiations with organic acid vapor were studied. GCIBs induce surface smoothing and enhancement of surface reactions without severe damage. Therefore, it is promising for the surface activated bonding (SAB). In this study, organic acid vapor is introduced during GCIB irradiation in order to assist surface oxide removal on metal films (such as Cu, Ni). From XPS study, NiO layer was selectively removed by reaction with adsorbed organic acid. Preliminary bonding experiment using this technique shows promising result for Cu-Cu bonding.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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