AlN薄膜的原子扩散键合

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598193

M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto

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引用次数: 0

摘要

我们演示了在室温下使用AlN薄膜的晶圆原子扩散键合(ADB)。结果表明，在键合界面处发生了晶格重排，形成了c轴垂直于膜面的集成AlN膜。

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Atomic Diffusion Bonding using AlN films

We demonstrated atomic diffusion bonding (ADB) of wafers using AlN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AlN film with c-axis perpendicular to the film plane formed.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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