表面活化键合制备极化倒置GaN/GaN结

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598452

K. Sawai, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa

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引用次数: 0

摘要

我们通过直接将独立GaN(0001)衬底彼此粘合来制造极化倒置的GaN/GaN结。采用传统的表面活化键合工艺。透射电镜观察到在键合的ga面/ ga面界面处存在~1 nm的缺陷层。

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Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding

We fabricate polarization-inverted GaN/GaN junctions by directly bonding freestanding GaN (0001) substrates to each other. The conventional surface activated bonding process is used. A ~1-nm defect layer is observed at the as-bonded Ga-face/Ga-face interface using transmission electron microscopy.

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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