GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598420

S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka

引用次数: 1

Abstract

GaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.

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室温键合技术制备金刚石表面GaN-HEMTs

采用表面活化室温键合技术成功制备了高电子迁移率的gan -on-金刚石晶体管。各种金刚石衬底经过精细抛光，并通过表面活化的室温键合与gan - hemt结合。与传统结构器件相比，制备的器件在散热方面表现出优越的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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