电沉积铟的低温三维堆积

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598451

F. Inoue, Kimoon Park, J. Derakhshandeh, B. Yoo

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引用次数: 0

摘要

对氯化铟电解液进行了广泛的电化学分析，使其适用于细间距微碰撞应用。采用20 μm孔径的通阻模式制备了铟微凸点与凸点下的铜、镍、钴等材料。沉积后，In与UBMs的界面处无缺陷。本文还研究了金属间化合物的形成动力学和界面反应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrodeposition of Indium for Low Temperature 3D Stacking

Extensive electrochemical analysis for Indium chloride electrolyte have been executed to make it applicable for fine pitch micro bump application. Indium micro bumps with under bump materials such as Copper, Nickel and Cobalt were fabricated in 20 μm pitch through-resist pattern. There was no defect at the interface between In and UBMs after deposition. The formation kinetics of intermetallic compounds and the interface reaction have also been investigated.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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