Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding

Abstract

5-μm Al films are bonded to β-Ga2O3 (−201) substrates using surface activated bonding. The nanostructural properties of as-bonded interfaces are examined using transmission electron microscopy and energy dispersive X-ray spectroscopy. 5-nm intermediate layers, which are likely to be due to the surface activation process, are observed.