常压条件下多晶金刚石衬底与硅片的直接键合

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598377

T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi

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引用次数: 0

摘要

用NH3和H2O2的混合物处理的多晶金刚石衬底直接与等离子体激活的硅片结合。它们在大气中接触表面后，在250℃下退火形成原子键。这种结合方法将有助于未来金刚石散热片与电子器件的大规模集成。

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Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions

A polycrystalline diamond substrate treated with a mixture of NH3 and H2O2 was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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