表面活化键合制备Al/β-Ga2O3界面的纳米结构分析

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598385

Zexin Wan, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa

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引用次数: 0

摘要

采用表面活化键合方法将5 μm Al薄膜与β-Ga2O3(−201)衬底结合。利用透射电子显微镜和能量色散x射线能谱分析了as键合界面的纳米结构特性。观察到可能由表面活化过程产生的5nm中间层。

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Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding

5-μm Al films are bonded to β-Ga2O3 (−201) substrates using surface activated bonding. The nanostructural properties of as-bonded interfaces are examined using transmission electron microscopy and energy dispersive X-ray spectroscopy. 5-nm intermediate layers, which are likely to be due to the surface activation process, are observed.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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