Atomic Diffusion Bonding using AlN films

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598193

M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto

引用次数: 0

Abstract

We demonstrated atomic diffusion bonding (ADB) of wafers using AlN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AlN film with c-axis perpendicular to the film plane formed.

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AlN薄膜的原子扩散键合

我们演示了在室温下使用AlN薄膜的晶圆原子扩散键合(ADB)。结果表明，在键合界面处发生了晶格重排，形成了c轴垂直于膜面的集成AlN膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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