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High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology 高效5W/10W 32 - 38GHz功率放大器mmic采用先进的0.15µm GaN HEMT技术
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751040
Shuoqi Chen, S. Nayak, C. Campbell, E. Reese
{"title":"High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology","authors":"Shuoqi Chen, S. Nayak, C. Campbell, E. Reese","doi":"10.1109/CSICS.2016.7751040","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751040","url":null,"abstract":"This paper describes the design and measured performance of two high efficiency Ka-band 32 - 38 GHz power amplifier MMICs fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. The process features a 50μm thin Silicon Carbide (SiC) substrate and compact transistor layouts with individual source via (ISV) grounding. The designs utilize an optimum transistor arrangement with both single-ended and balanced approaches. The 2-stage single-ended power amplifier MMIC demonstrates 4.5 - 5.2 W of output power with 25 - 34% PAE over 32 - 38 GHz band. For the second MMIC, two 3-stage power amplifiers are combined to achieve 9.0 - 11.2 W output power with 30 - 35% PAE over the same frequency range. A benchmark of 1.45W/mm2 FOM (output power to die area ratio) with high efficiency is reported at this frequency band.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122011405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
A Wideband 341-386 GHz Transmitter in SiGe BiCMOS Technology 基于SiGe BiCMOS技术的341-386 GHz宽带发射机
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751024
Jidan Al-Eryani, H. Knapp, J. Wursthorn, K. Aufinger, M. Furqan, Faisal Ahmed, Hao Li, S. Majied, L. Maurer
{"title":"A Wideband 341-386 GHz Transmitter in SiGe BiCMOS Technology","authors":"Jidan Al-Eryani, H. Knapp, J. Wursthorn, K. Aufinger, M. Furqan, Faisal Ahmed, Hao Li, S. Majied, L. Maurer","doi":"10.1109/CSICS.2016.7751024","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751024","url":null,"abstract":"A transmitter with an output frequency range from 341 to 386 GHz is presented. Power output varies from 0.1 to -15.8 dBm along its operating range, while it remains above -2.9 dBm from 341 to 353 GHz. The high-frequency signal is generated using a wideband push-push voltage-controlled oscillator (VCO) with coarse and fine frequency tuning control, a 3-stage power amplifier, and a frequency doubler. Additionally, a frequency divider is integrated to provide a second low- frequency output for measurement purposes and to enable later the addition of a phase-locked loop (PLL) for the stabilization of the VCO. The obtained frequency tuning range of 12.4% is a record value for silicon-based transmitters above 300 GHz. The total power consumption is 790 mW. The chip is fabricated in a 130nm SiGe BiCMOS technology with fT/fmax = 250/370 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128590561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Terahertz Detection and Imaging Systems and Applications 太赫兹探测和成像系统及其应用
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751068
E. Grossman, J. Cheron
{"title":"Terahertz Detection and Imaging Systems and Applications","authors":"E. Grossman, J. Cheron","doi":"10.1109/CSICS.2016.7751068","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751068","url":null,"abstract":"We describe packaging challenges for the development of practical THz imagers based on InP transistor circuits. Very high aspect ratio (>20:1) die singulation and additive manufacturing for waveguide housings are shown to help in addressing these challenges.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114629954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The EU DOTSEVEN Project: Overview and Results 欧盟DOTSEVEN项目:概述和结果
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751070
M. Schroter, J. Boeck, V. d’Alessandro, S. Frégonèse, B. Heinemann, C. Jungemann, W. Liang, H. Kamrani, A. Mukherjee, A. Pawlak, U. Pfeiffer, N. Rinaldi, N. Sarmah, T. Zimmer, G. Wedel
{"title":"The EU DOTSEVEN Project: Overview and Results","authors":"M. Schroter, J. Boeck, V. d’Alessandro, S. Frégonèse, B. Heinemann, C. Jungemann, W. Liang, H. Kamrani, A. Mukherjee, A. Pawlak, U. Pfeiffer, N. Rinaldi, N. Sarmah, T. Zimmer, G. Wedel","doi":"10.1109/CSICS.2016.7751070","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751070","url":null,"abstract":"DOTSEVEN is an ambitious research project aiming at pushing the limits of SiGe HBT technology, modeling, circuits, and systems towards mm- and sub-mm wave applications. The project with a 12.3 M€ total funding and a duration of 45 months started in late 2012 and has been sponsored by the European Commission. This paper gives an overview on the project goals, its organization, and selected results that have been achieved.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132896112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Compact Phase Accurate Low Loss S-Band 6-Bit Phase Shifter in a 5x5 mm² Plastic over Molded Package 紧凑型相位精确低损耗s带6位移相器，采用5x5 mm²塑料模制封装
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751034
D. Allen, Tuong Nguyen
{"title":"Compact Phase Accurate Low Loss S-Band 6-Bit Phase Shifter in a 5x5 mm² Plastic over Molded Package","authors":"D. Allen, Tuong Nguyen","doi":"10.1109/CSICS.2016.7751034","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751034","url":null,"abstract":"This paper presents the design and performance of a compact phase accurate low loss S-band 6-bit digital phase shifter in a 5x5 mm2 plastic over molded package. This S-band phase shifter has best in class RMS phase error of 1 degree over the 2.7-3.5 GHz range with a maximum low insertion loss of 5 dB. RMS amplitude error varies from 0.2-0.4 dB over this band and phase accuracy is maintained at high input signal levels up to 30 dBm. With over molding, the design is capable of operating in high moisture environments. Typical applications are phased array radars and communications.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133034351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Broadband (100MHz -1GHz), High Power Active Circulator Architecture 宽带(100MHz -1GHz)，大功率有源环行器架构
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751029
Jongchan Kang, H. Sharifi, H. Moyer, E. Prophet
{"title":"Broadband (100MHz -1GHz), High Power Active Circulator Architecture","authors":"Jongchan Kang, H. Sharifi, H. Moyer, E. Prophet","doi":"10.1109/CSICS.2016.7751029","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751029","url":null,"abstract":"We report very wideband 100 MHz to 1 GHz active circulator with high power operation up to 30 dBm for the first time. In order to achieve broadband high power circulation and isolation, a new architecture is developed using low-loss RF choke concept and it is implemented on alumina substrate with mounted GaN HEMT devices along with other SMTs. The performed test shows minimum 15 to 20 dB isolation up to 30 dBm and 15 dB directivity up to 26 dBm across the band with 2.5~5 dB insertion loss for 15 dB of minimum directivity.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"os-46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127785502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra-Low-Power Components for a 94 GHz Transceiver 用于94 GHz收发器的超低功耗组件
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751076
Seong-Kyun Kim, R. Maurer, A. Simsek, M. Urteaga, M. Rodwell
{"title":"Ultra-Low-Power Components for a 94 GHz Transceiver","authors":"Seong-Kyun Kim, R. Maurer, A. Simsek, M. Urteaga, M. Rodwell","doi":"10.1109/CSICS.2016.7751076","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751076","url":null,"abstract":"We present a fully-integrated 94 GHz transceiver front-end in a 130 nm / 1.1 THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5 V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21 dB gain, <; 9.3 dB noise figure, and consumes 39 mW, while in transmitting mode with time-duplexed vertical and horizontal outputs, the transceiver achieves 5 dBm output power, 22 dB gain, and consumes 40 mW. At 1.0 V bias, in dual-polarization simultaneous receiving mode, the IC has 22.7 dB gain, <; 8.9 dB noise figure, and consumes 26 mW.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"299 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132681395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Reconfigurable Electronics for Adaptive RF Systems 自适应射频系统的可重构电子技术
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751061
R. Olsson, Kyle Bunch, C. Gordon
{"title":"Reconfigurable Electronics for Adaptive RF Systems","authors":"R. Olsson, Kyle Bunch, C. Gordon","doi":"10.1109/CSICS.2016.7751061","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751061","url":null,"abstract":"This paper overviews the Defense Advanced Research Projects Agency (DARPA) Adaptive RF Technologies (ART) and Arrays at Commercial Timescales (ACT) programs. These programs seek to create adaptable and reusable RF hardware in order to lower nonrecurring engineering development costs and timelines for RF systems and to allow RF hardware to be adapted to new missions after fielding. To achieve this vision, new RF architectures more amenable to reconfigurability have been developed along with component technologies that reduce the performance penalty associated with adaptive RF hardware.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128276181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Electron Mobility and Self-Heat Modeling of AlN/GaN MIS-HEMTs with Embedded Source Field-Plate Structures 嵌入源场板结构的AlN/GaN miss - hemt的电子迁移率和自热建模
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751038
H. Aoki, N. Tsukiji, H. Sakairi, K. Chikamatsu, N. Kuroda, S. Shibuya, K. Kurihara, M. Higashino, H. Kobayashi, K. Nakahara
{"title":"Electron Mobility and Self-Heat Modeling of AlN/GaN MIS-HEMTs with Embedded Source Field-Plate Structures","authors":"H. Aoki, N. Tsukiji, H. Sakairi, K. Chikamatsu, N. Kuroda, S. Shibuya, K. Kurihara, M. Higashino, H. Kobayashi, K. Nakahara","doi":"10.1109/CSICS.2016.7751038","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751038","url":null,"abstract":"Electron mobility and self-heating models for drain current simulations of AlN/GaN MIS-HEMTs have been derived for embedded source field-plate structures. They are scalable physical models. To apply the models to simulate power switching applications including DC-DC converters, the weak inversion to linear characteristics and the maximum drain current are important. The models are implemented in MIT Virtual Source model with modifications of Verilog-A source codes. The model parameters are extracted from measured data of the transistor test structures that we fabricated with an embedded source field-plate technology. The results show excellent agreements between measurements and simulations.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"8 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126039037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Multi-Octave and Frequency-Agile LNAs Covering S-C Band Using 0.25 µm GaN Technology 使用0.25µm GaN技术覆盖S-C波段的多倍频和频率敏捷LNAs
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751057
A. Mattamana, W. Gouty, W. Khalil, P. Watson, V. Patel
{"title":"Multi-Octave and Frequency-Agile LNAs Covering S-C Band Using 0.25 µm GaN Technology","authors":"A. Mattamana, W. Gouty, W. Khalil, P. Watson, V. Patel","doi":"10.1109/CSICS.2016.7751057","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751057","url":null,"abstract":"This paper reports the design and measured results of a multi-octave low noise amplifier (LNA) and a frequency-agile LNA utilizing a 0.25 μm gallium nitride (GaN) integrated circuit process technology for multi-band receiver applications. The demonstrated broadband LNA covers an instantaneous bandwidth from S- to C-bands (2.2-7.0 GHz), and the frequency-agile LNA cumulatively spans across 3 distinct bands (2.2-2.4 GHz, 4.4-5.0 GHz, and 5.0-6.7 GHz). The measured noise figure (NF), output third order intercept (OIP3), and peak gain of the wideband LNA is 1.0-1.7 dB, 19.0-26.0 dBm, and 10.6 dB with a gain flatness of +/- 0.35 dB respectively at a nominal power consumption of 480 mW across the band. At the same nominal power consumption, the frequency-agile LNA demonstrated a NF of 1.3, 1.4, and 1.2 dB; OIP3 of 23, 27, and 31 dBm; and gain of 13.6, 10.6, and 10.8 dB at 2.3 GHz, 4.7 GHz, and 5.8 GHz, respectively. The performance of the frequency-agile LNA is comparable to that of optimized narrowband LNAs at S- and C-bands. Compared to the multi-octave LNA, the frequency-agile LNA demonstrated better performance in gain and OIP3 at the frequencies of interest.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122535657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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