使用0.25µm GaN技术覆盖S-C波段的多倍频和频率敏捷LNAs

A. Mattamana, W. Gouty, W. Khalil, P. Watson, V. Patel
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引用次数: 9

摘要

采用0.25 μm氮化镓(GaN)集成电路工艺技术,设计了一种多倍频低噪声放大器(LNA)和一种频率捷变放大器(LNA),用于多波段接收机。所演示的宽带LNA覆盖从S到c波段(2.2-7.0 GHz)的瞬时带宽,并且频率敏捷LNA累计跨越3个不同的频段(2.2-2.4 GHz, 4.4-5.0 GHz和5.0-6.7 GHz)。宽带LNA的实测噪声系数(NF)、输出三阶截距(OIP3)和峰值增益分别为1.0-1.7 dB、19.0-26.0 dBm和10.6 dB,增益平坦度分别为+/- 0.35 dB,整个频段的标称功耗为480 mW。在相同的标称功耗下,频率捷变LNA的NF值分别为1.3、1.4和1.2 dB;OIP3分别为23,27,31 dBm;在2.3 GHz、4.7 GHz和5.8 GHz频段分别获得13.6、10.6和10.8 dB的增益。频率捷变LNA在S波段和c波段的性能与优化后的窄带LNA相当。与多倍频程LNA相比,频率敏捷LNA在感兴趣的频率上具有更好的增益和OIP3性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multi-Octave and Frequency-Agile LNAs Covering S-C Band Using 0.25 µm GaN Technology
This paper reports the design and measured results of a multi-octave low noise amplifier (LNA) and a frequency-agile LNA utilizing a 0.25 μm gallium nitride (GaN) integrated circuit process technology for multi-band receiver applications. The demonstrated broadband LNA covers an instantaneous bandwidth from S- to C-bands (2.2-7.0 GHz), and the frequency-agile LNA cumulatively spans across 3 distinct bands (2.2-2.4 GHz, 4.4-5.0 GHz, and 5.0-6.7 GHz). The measured noise figure (NF), output third order intercept (OIP3), and peak gain of the wideband LNA is 1.0-1.7 dB, 19.0-26.0 dBm, and 10.6 dB with a gain flatness of +/- 0.35 dB respectively at a nominal power consumption of 480 mW across the band. At the same nominal power consumption, the frequency-agile LNA demonstrated a NF of 1.3, 1.4, and 1.2 dB; OIP3 of 23, 27, and 31 dBm; and gain of 13.6, 10.6, and 10.8 dB at 2.3 GHz, 4.7 GHz, and 5.8 GHz, respectively. The performance of the frequency-agile LNA is comparable to that of optimized narrowband LNAs at S- and C-bands. Compared to the multi-octave LNA, the frequency-agile LNA demonstrated better performance in gain and OIP3 at the frequencies of interest.
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