Seong-Kyun Kim, R. Maurer, A. Simsek, M. Urteaga, M. Rodwell
{"title":"Ultra-Low-Power Components for a 94 GHz Transceiver","authors":"Seong-Kyun Kim, R. Maurer, A. Simsek, M. Urteaga, M. Rodwell","doi":"10.1109/CSICS.2016.7751076","DOIUrl":null,"url":null,"abstract":"We present a fully-integrated 94 GHz transceiver front-end in a 130 nm / 1.1 THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5 V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21 dB gain, <; 9.3 dB noise figure, and consumes 39 mW, while in transmitting mode with time-duplexed vertical and horizontal outputs, the transceiver achieves 5 dBm output power, 22 dB gain, and consumes 40 mW. At 1.0 V bias, in dual-polarization simultaneous receiving mode, the IC has 22.7 dB gain, <; 8.9 dB noise figure, and consumes 26 mW.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"299 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We present a fully-integrated 94 GHz transceiver front-end in a 130 nm / 1.1 THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5 V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21 dB gain, <; 9.3 dB noise figure, and consumes 39 mW, while in transmitting mode with time-duplexed vertical and horizontal outputs, the transceiver achieves 5 dBm output power, 22 dB gain, and consumes 40 mW. At 1.0 V bias, in dual-polarization simultaneous receiving mode, the IC has 22.7 dB gain, <; 8.9 dB noise figure, and consumes 26 mW.