高效5W/10W 32 - 38GHz功率放大器mmic采用先进的0.15µm GaN HEMT技术

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751040

Shuoqi Chen, S. Nayak, C. Campbell, E. Reese

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引用次数: 35

摘要

介绍了采用先进的0.15μm氮化镓(GaN) HEMT工艺制备的两种高效ka波段32 ~ 38ghz功率放大器mmic的设计和性能测量。该工艺的特点是采用50μm薄的碳化硅(SiC)衬底和紧凑的晶体管布局，具有单独的源孔(ISV)接地。该设计利用单端和平衡方法的最佳晶体管排列。2级单端功率放大器MMIC在32 - 38 GHz频段的输出功率为4.5 - 5.2 W, PAE为25 - 34%。对于第二个MMIC，两个3级功率放大器组合在一起，在相同的频率范围内实现9.0 - 11.2 W的输出功率和30 - 35%的PAE。据报道，在该频段有1.45W/mm2 FOM(输出功率与芯片面积比)的高效率基准。

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High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology

This paper describes the design and measured performance of two high efficiency Ka-band 32 - 38 GHz power amplifier MMICs fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. The process features a 50μm thin Silicon Carbide (SiC) substrate and compact transistor layouts with individual source via (ISV) grounding. The designs utilize an optimum transistor arrangement with both single-ended and balanced approaches. The 2-stage single-ended power amplifier MMIC demonstrates 4.5 - 5.2 W of output power with 25 - 34% PAE over 32 - 38 GHz band. For the second MMIC, two 3-stage power amplifiers are combined to achieve 9.0 - 11.2 W output power with 30 - 35% PAE over the same frequency range. A benchmark of 1.45W/mm2 FOM (output power to die area ratio) with high efficiency is reported at this frequency band.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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