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Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices 用于gan -on-金刚石器件的CVD金刚石导热性表征
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751032
Luke Yates, A. Sood, Zhe Cheng, Thomas L. Bougher, Kirkland D. Malcolm, Jungwan Cho, M. Asheghi, K. Goodson, M. Goorsky, F. Faili, D. Twitchen, S. Graham
{"title":"Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices","authors":"Luke Yates, A. Sood, Zhe Cheng, Thomas L. Bougher, Kirkland D. Malcolm, Jungwan Cho, M. Asheghi, K. Goodson, M. Goorsky, F. Faili, D. Twitchen, S. Graham","doi":"10.1109/CSICS.2016.7751032","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751032","url":null,"abstract":"Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth conditions. Thus accurate characterization of the thermal conductivity of CVD diamond, especially the lower conductivity near the growth interface is needed to assess the impact on AlGaN/GaN HEMTs. In this work, we present measurements of the thickness dependence of CVD diamond with thicknesses ranging from 5 to 13.8 μ m in addition to bulk diamond substrates using time domain thermoreflectance. Measurements were made on the same samples in two different laboratories which showed excellent correlation between the measurements. The diamond properties were then utilized in a thermal model of a 10 finger AlGaN/GaN HEMT to predict the impact of device junction temperature. Compared to a device made on SiC operating at 5 W/mm, a junction temperature reduction of 30-40% was seen when using CVD diamond and the same device size.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114301244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT 氮化镓隔离层对GaN HEMT正栅电流和应力诱发漏电流的影响
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751071
Chung-hsu Chen, David Wang, Daniel Hou, Yuefei Yang, W. Yau, R. Sadler, W. Sutton, JeoungChill Shim, Shiguang Wang
{"title":"The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT","authors":"Chung-hsu Chen, David Wang, Daniel Hou, Yuefei Yang, W. Yau, R. Sadler, W. Sutton, JeoungChill Shim, Shiguang Wang","doi":"10.1109/CSICS.2016.7751071","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751071","url":null,"abstract":"A typical GaN HEMT forward gate current can be described by a simplified model, i.e., a Schottky diode with a parasitic resistance. This model, though, fails to fit certain GaN HEMT devices, noticeably those with AlN spacer. The Tsu-Esaki tunneling model with transfer matrix approach was used to investigate this phenomenon. The result shows that the forward gate current at low Vg is limited by Schottky interface as expected. At higher Vg, the AlN/GaN interface barrier gradually becomes dominant in deciding the gate current. This observation also reveals a discrepancy between measured and calculated gate current with an AlN spacer. Stress-induced leakage current (SILC) of this device type is investigated and the leakage current can be assigned to failure of the Schottky diode and/or the AlN/GaN interface using the back-to-back diode model. This model helps circuit designers to simulate RF performance under gate leakage condition.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114307879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Distortion in Difference Frequency under Two-Tone Signal Input Evaluated with Volterra Series Analysis 用Volterra级数分析评价双音信号输入下差频失真
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751037
Keiichi Tamesue, T. Egawa, A. Wakejima
{"title":"Distortion in Difference Frequency under Two-Tone Signal Input Evaluated with Volterra Series Analysis","authors":"Keiichi Tamesue, T. Egawa, A. Wakejima","doi":"10.1109/CSICS.2016.7751037","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751037","url":null,"abstract":"For the first step of evaluation of the effect of difference frequency distortion in intermodulation distortion and memory effects, we have derived distortion characteristics at the difference frequency as well as third-order intermodulation. In practical calculation of Volterra kernel in frequency domain, we used measured I-V characteristics, and S-parameters in both fundamental (around 2 GHz) and difference frequencies (down to 3 MHz) of an AlGaN/GaN HEMT. We obtained waving in magnitude of third order-Volterra kernel (H3) as a function of frequency |Δf|. Furthermore, our simulation predicted how frequency dependence of the transistor around the fundamental frequency affects unbalance of intermodulation distortion under no conversion effect from harmonics and difference frequencies. In terms of H2 for difference frequency, the magnitude was decreasing by increasing in frequency from 3 MHz to 40 MHz even though the phase of H2 was almost constant which may results from current collapse of the GaN HEMT.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116438474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Linearity W-Band Amplifiers in 130 nm InP HBT Technology 130 nm InP HBT技术的高线性w波段放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751042
R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell
{"title":"High-Linearity W-Band Amplifiers in 130 nm InP HBT Technology","authors":"R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell","doi":"10.1109/CSICS.2016.7751042","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751042","url":null,"abstract":"We present a high-linearity pseudo-differential Wband amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm2 die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/-1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100 GHz. To the author's knowledge, these are among the first reported dynamic range measurements for W-band amplifiers.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114834304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suitability of InP DHBTs in ET/APT Systems InP dhbt在ET/APT系统中的适用性
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751067
P. Zampardi, B. Moser, J. Li, Divya S. Gamini, D. Limanto, K. Muhonen
{"title":"Suitability of InP DHBTs in ET/APT Systems","authors":"P. Zampardi, B. Moser, J. Li, Divya S. Gamini, D. Limanto, K. Muhonen","doi":"10.1109/CSICS.2016.7751067","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751067","url":null,"abstract":"InP DHBTs are receiving a great deal of attention for its potential in the yet, undefined, 5G systems. In this paper, \"waterfall\" curves are evaluated for InP DHBTs at 900MHz and show that it can provide an improvement in PAE at low voltages (10% better than GaAs or SiGe HBTs). RF Knee MAG/MSG metrics at 5.4GHz and 15.4 GHz as compared to GaAs HBTs were also measured. These measurements indicate in some bias regions, InP can provide a large advantage in RF Gain compared to GaAs. These results demonstrate that InP DHBTs have significant potential for envelope tracking (ET) and average power tracking (APT) at conventional frequencies (<;6GHz) as well as for 5G wireless systems from 0.4- 40GHz. To the authors' knowledge, InP DHBT data in this context has not been previously reported in the literature.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114064108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP Segmented Mach-Zehnder Modulators with Advanced Electro-Optical Functionalities 具有先进光电功能的分段马赫-曾德调制器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751047
Alessandro Aimone
{"title":"InP Segmented Mach-Zehnder Modulators with Advanced Electro-Optical Functionalities","authors":"Alessandro Aimone","doi":"10.1109/CSICS.2016.7751047","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751047","url":null,"abstract":"Resonant segmented Mach-Zehnder modulators which enable DAC functionalities without the use of dedicated components are here presented. The modulators are shown to broaden the bandwidth of an EO transmitter. Error-free modulation of a 56 GBd OOK signal is demonstrated employing electronics with 22 GHz bandwidth only. The modulators are also used to shape the spectrum of an optical signal for Nyquist-space applications. The quality of the spectral shaping is investigated in a dualcarrier 4-PAM 56 GBd scenario with BER measurements.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129405176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel 0.1-44 GHz Linear Common-Drain-Cascode 0.15µm GaN Distributed Amplifier Architecture with Improved IP3-BW 一种改进IP3-BW的0.1-44 GHz线性共漏- cascode 0.15µm GaN分布式放大器结构
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751023
K. Kobayashi, D. Denninghoff, Dain Miller
{"title":"A Novel 0.1-44 GHz Linear Common-Drain-Cascode 0.15µm GaN Distributed Amplifier Architecture with Improved IP3-BW","authors":"K. Kobayashi, D. Denninghoff, Dain Miller","doi":"10.1109/CSICS.2016.7751023","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751023","url":null,"abstract":"This paper reports on a novel 0.1-44 GHz linear common-drain-Cascode (CD-Cascode) GaN distributed amplifier architecture with improved IP3-BW performance. The CD-Cascode DA MMIC is based on a 0.15μm GaN-HEMT wafer process technology. By exploiting the common-drain-Cascode as a transconductance device cell, an improvement in IP3 of 9 dB at mid-band (20GHz) and > 3 dB from 30-44 GHz were achieved as compared to a conventional Cascode DA implementation without sacrificing gain-bandwidth. The resulting amplifier achieves IP3's of 45.2, 34.5, and 33.5 dBm at 20, 40, and 44 GHz, respectively. To the author's knowledge this is believed to be the highest IP3 reported for a GaN DA at these frequencies. The amplifier obtains a nominal gain of 17 dB and maintains greater than 10 dB of gain up to 45 GHz with good input and output return-loss. The new linear CD-Cascode GaN DA MMIC architecture has far-reaching implications to linear coherent fiber optic, broadband wireless, SDR, and instrumentation applications.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117121611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low Power Ultra-Wide Band LNA Based on Active Impedance Matching Technique for UWB Wireless Communication 基于有源阻抗匹配技术的低功耗超宽带LNA在超宽带无线通信中的应用
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751052
M. Sakalas, P. Sakalas, F. Ellinger
{"title":"Low Power Ultra-Wide Band LNA Based on Active Impedance Matching Technique for UWB Wireless Communication","authors":"M. Sakalas, P. Sakalas, F. Ellinger","doi":"10.1109/CSICS.2016.7751052","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751052","url":null,"abstract":"A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133738907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
CMOS ADCs Towards 100 GS/s and Beyond 面向100gs /s及以上的CMOS adc
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751033
L. Kull, D. Luu, P. Francese, C. Menolfi, M. Braendli, M. Kossel, T. Morf, A. Cevrero, I. Oezkaya, Hazar Yueksel, T. Toifl
{"title":"CMOS ADCs Towards 100 GS/s and Beyond","authors":"L. Kull, D. Luu, P. Francese, C. Menolfi, M. Braendli, M. Kossel, T. Morf, A. Cevrero, I. Oezkaya, Hazar Yueksel, T. Toifl","doi":"10.1109/CSICS.2016.7751033","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751033","url":null,"abstract":"The implementation of a 64x time-interleaved ADC in 32nm CMOS SOI is analyzed. Measurement results confirm 33 dB SNDR up to 19.9 GHz at 90 GS/s and 1.2V supply. Architecture details and analysis show insights into limitations and potentials of the chosen architecture. In par-ticular the input bandwidth is of concern for ADCs at more than 64 GS/s, as a larger number of sampling switches in-creases the parasitic load and reduces the input bandwidth. Insights on a simplified analysis of interleaver structures and existing solutions to bandwidth issues are highlighted and show a path to extend the sampling speed of CMOS ADCs beyond 100 GS/s.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127678443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Wideband W-Band GAN LNA MMIC with State-of-the-Art Noise Figure 具有最先进噪声图的宽带w波段GAN LNA MMIC
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751079
S. Lardizabal, K. C. Hwang, J. Kotce, A. Brown, A. Fung
{"title":"Wideband W-Band GAN LNA MMIC with State-of-the-Art Noise Figure","authors":"S. Lardizabal, K. C. Hwang, J. Kotce, A. Brown, A. Fung","doi":"10.1109/CSICS.2016.7751079","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751079","url":null,"abstract":"W-band GaN amplifiers developed for the NASA Earth Science Technology Office, ESTO, enable compact active electronically steerable arrays (AESA's) for cloud Doppler radar. This paper describes the design fabrication and test of 100 nm GaN HEMT low noise amplifiers for NASA's latest 3-band Doppler radar instrument concept. Our results show state-of-the-art performance for a 92 GHz to 96 GHz channel with gain greater than 17 dB and noise figure less than 5 dB. Detailed on-wafer testing shows record low measured noise figure of 3.0 dB with 20 dB of gain and dc power of 128 mW using a 5 Volt supply.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125119614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
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