{"title":"130 nm InP HBT技术的高线性w波段放大器","authors":"R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell","doi":"10.1109/CSICS.2016.7751042","DOIUrl":null,"url":null,"abstract":"We present a high-linearity pseudo-differential Wband amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm2 die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/-1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100 GHz. To the author's knowledge, these are among the first reported dynamic range measurements for W-band amplifiers.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Linearity W-Band Amplifiers in 130 nm InP HBT Technology\",\"authors\":\"R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell\",\"doi\":\"10.1109/CSICS.2016.7751042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a high-linearity pseudo-differential Wband amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm2 die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/-1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100 GHz. To the author's knowledge, these are among the first reported dynamic range measurements for W-band amplifiers.\",\"PeriodicalId\":183218,\"journal\":{\"name\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2016.7751042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Linearity W-Band Amplifiers in 130 nm InP HBT Technology
We present a high-linearity pseudo-differential Wband amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm2 die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/-1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100 GHz. To the author's knowledge, these are among the first reported dynamic range measurements for W-band amplifiers.
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