{"title":"Low Power Ultra-Wide Band LNA Based on Active Impedance Matching Technique for UWB Wireless Communication","authors":"M. Sakalas, P. Sakalas, F. Ellinger","doi":"10.1109/CSICS.2016.7751052","DOIUrl":null,"url":null,"abstract":"A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.