基于有源阻抗匹配技术的低功耗超宽带LNA在超宽带无线通信中的应用

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751052

M. Sakalas, P. Sakalas, F. Ellinger

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引用次数: 5

摘要

基于有源阻抗匹配技术和SiGe BiCMOS技术，设计制作了一种两级超宽带低噪声放大器(LNA) MMIC。测量的传感器增益为10.2 dB，噪声系数低于4.7 dB， -3 dB带宽为50 GHz，直流功耗为8.06 mW，产生了迄今为止报道的最佳性能值(FOM)。所提出的LNA显示出很大程度的设计简单性，并且只需要0.16 mm2的总芯片面积。

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Low Power Ultra-Wide Band LNA Based on Active Impedance Matching Technique for UWB Wireless Communication

A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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