InP dhbt在ET/APT系统中的适用性

P. Zampardi, B. Moser, J. Li, Divya S. Gamini, D. Limanto, K. Muhonen
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引用次数: 1

摘要

InP dhbt因其在尚未定义的5G系统中的潜力而受到广泛关注。在本文中,对900MHz的InP dhbt的“瀑布”曲线进行了评估,并表明它可以在低电压下改善PAE(比GaAs或SiGe HBTs好10%)。与GaAs hbt相比,还测量了5.4GHz和15.4 GHz的RF Knee MAG/MSG指标。这些测量表明,在某些偏置区域,与GaAs相比,InP可以提供很大的RF增益优势。这些结果表明,InP dhbt在常规频率(< 6GHz)以及0.4- 40GHz的5G无线系统中具有显著的包络跟踪(ET)和平均功率跟踪(APT)潜力。据作者所知,在此背景下的InP DHBT数据以前没有在文献中报道过。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Suitability of InP DHBTs in ET/APT Systems
InP DHBTs are receiving a great deal of attention for its potential in the yet, undefined, 5G systems. In this paper, "waterfall" curves are evaluated for InP DHBTs at 900MHz and show that it can provide an improvement in PAE at low voltages (10% better than GaAs or SiGe HBTs). RF Knee MAG/MSG metrics at 5.4GHz and 15.4 GHz as compared to GaAs HBTs were also measured. These measurements indicate in some bias regions, InP can provide a large advantage in RF Gain compared to GaAs. These results demonstrate that InP DHBTs have significant potential for envelope tracking (ET) and average power tracking (APT) at conventional frequencies (<;6GHz) as well as for 5G wireless systems from 0.4- 40GHz. To the authors' knowledge, InP DHBT data in this context has not been previously reported in the literature.
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