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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

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H-Terminated Diamond MISFETs with V2O5 as Insulator 以V2O5为绝缘体的h端金刚石misfet
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751046
S. Colangeli, C. Verona, W. Ciccognani, M. Marinelli, G. Rinati, E. Limiti, M. Benetti, D. Cannatà, F. Pietrantonio
{"title":"H-Terminated Diamond MISFETs with V2O5 as Insulator","authors":"S. Colangeli, C. Verona, W. Ciccognani, M. Marinelli, G. Rinati, E. Limiti, M. Benetti, D. Cannatà, F. Pietrantonio","doi":"10.1109/CSICS.2016.7751046","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751046","url":null,"abstract":"In this work we report on the performance of a MISFET device realized by exploiting the peculiarities of Vanadium Pentoxide (V2O5) as insulating material between the gate metal and the hydrogenated single crystal diamond surface. As opposed to the typical oxide materials (such as Al2O3), the high electron affinity of the proposed oxide allows for the p-type charge transfer doping of the underlying diamond substrate. The comparison of the hydrogenated diamond surface with and without the V2O5 are reported jointly with the electrical performance of the optimized MISFETs and a preliminary small-signal equivalent circuit.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122650437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 56-Gb/s Transimpedance Amplifier in 0.13-µm SiGe BiCMOS for an Optical Receiver with -18.8-dBm Input Sensitivity 用于-18.8 dbm输入灵敏度光接收机的0.13µm SiGe BiCMOS 56 gb /s跨阻放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751018
K. Honda, Hiroaki Katsurai, M. Nada, M. Nogawa, H. Nosaka
{"title":"A 56-Gb/s Transimpedance Amplifier in 0.13-µm SiGe BiCMOS for an Optical Receiver with -18.8-dBm Input Sensitivity","authors":"K. Honda, Hiroaki Katsurai, M. Nada, M. Nogawa, H. Nosaka","doi":"10.1109/CSICS.2016.7751018","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751018","url":null,"abstract":"This paper describes a 56-Gb/s transimpedance amplifier with a level-shift circuit and double-feedback-loop (DFB) compensation architecture to achieve high input sensitivity. The level-shift circuit placed between a main transimpedance amplifier and a post amplifier mitigates the trade-off between the bandwidth and noise of the receiver, which reduces the input referred noise by 70%. The DFB compensates for process variation without increasing the noise. The transimpedance amplifier was fabricated in 0.13-um SiGe BiCMOS technology and packaged with an avalanche photodiode. The 3-dB bandwidth of 38.4 GHz and the input referred noise current density of 14.8 pA/rtHz are achieved. These are the best performance among published 50-Gb/s-class transimpedance amplifiers for optical communication.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124919019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier w波段放大器的高功率密度InAlGaN/GaN-HEMT技术
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751045
K. Makiyama, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto
{"title":"High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier","authors":"K. Makiyama, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto","doi":"10.1109/CSICS.2016.7751045","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751045","url":null,"abstract":"We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted to suppress current collapse. The developed discrete InAlGaN/GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and the Pout density of MMIC reached 3.6W/mm at 86 GHz. We proved excellent potential of developed InAlGaN/GaN-HEMT using our unique device technologies. Furthermore, we suggested the physical advantage of the InAlGaN/GaN-HEMT structure using device simulator.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122565278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
X-Band GaN Multi-Level Chireix Outphasing PA with a Discrete Supply Modulator MMIC 带离散电源调制器MMIC的x波段GaN多级Chireix缺相PA
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751080
M. Litchfield, Tommaso A. Cappello, C. Florian, Z. Popovic
{"title":"X-Band GaN Multi-Level Chireix Outphasing PA with a Discrete Supply Modulator MMIC","authors":"M. Litchfield, Tommaso A. Cappello, C. Florian, Z. Popovic","doi":"10.1109/CSICS.2016.7751080","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751080","url":null,"abstract":"This paper presents the characterization of a multi-level Chireix outphasing PA with a GaN discrete supply modulator MMIC at 9.7GHz. The internal PAs include class-F harmonic terminations, while the Chireix combiner determines the fundamental frequency load modulation. A power-DAC architecture provides 8 supply levels with 3 half-bridges, maintaining more than 85% efficiency. The combination of the two achieves a peak output power of 4.8W, and average total efficiencies for a 6dB PAR QPSK signal of 44.1% and 48.1% with and without considering the supply modulator consumption, respectively, demonstrating the feasibility of this PA architecture with a real discrete supply modulator.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"58 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127578825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
X-Band Robust Current-Shared GaN Low Noise Amplifier for Receiver Applications 用于接收器应用的x波段鲁棒电流共享GaN低噪声放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751081
Bumjin Kim, Weixiang Gao
{"title":"X-Band Robust Current-Shared GaN Low Noise Amplifier for Receiver Applications","authors":"Bumjin Kim, Weixiang Gao","doi":"10.1109/CSICS.2016.7751081","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751081","url":null,"abstract":"This paper presents the design and the measured results of a GaN-based low noise amplifier MMIC designed to operate at X-band frequencies. The design successfully demonstrated current-shared topology to minimize DC current consumption while providing greater than 25dB of small signal gain and less than 2.5dB of noise figure. The LNA has shown to be robust to at least 5W of CW input power with saturated output power of less than 17dBm. The design technique and the results presented here can be leveraged in designing GaN- based receiver front ends.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128432274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
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