Seong-Kyun Kim, R. Maurer, A. Simsek, M. Urteaga, M. Rodwell
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Ultra-Low-Power Components for a 94 GHz Transceiver
We present a fully-integrated 94 GHz transceiver front-end in a 130 nm / 1.1 THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5 V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21 dB gain, <; 9.3 dB noise figure, and consumes 39 mW, while in transmitting mode with time-duplexed vertical and horizontal outputs, the transceiver achieves 5 dBm output power, 22 dB gain, and consumes 40 mW. At 1.0 V bias, in dual-polarization simultaneous receiving mode, the IC has 22.7 dB gain, <; 8.9 dB noise figure, and consumes 26 mW.