A. Mattamana, W. Gouty, W. Khalil, P. Watson, V. Patel
{"title":"Multi-Octave and Frequency-Agile LNAs Covering S-C Band Using 0.25 µm GaN Technology","authors":"A. Mattamana, W. Gouty, W. Khalil, P. Watson, V. Patel","doi":"10.1109/CSICS.2016.7751057","DOIUrl":null,"url":null,"abstract":"This paper reports the design and measured results of a multi-octave low noise amplifier (LNA) and a frequency-agile LNA utilizing a 0.25 μm gallium nitride (GaN) integrated circuit process technology for multi-band receiver applications. The demonstrated broadband LNA covers an instantaneous bandwidth from S- to C-bands (2.2-7.0 GHz), and the frequency-agile LNA cumulatively spans across 3 distinct bands (2.2-2.4 GHz, 4.4-5.0 GHz, and 5.0-6.7 GHz). The measured noise figure (NF), output third order intercept (OIP3), and peak gain of the wideband LNA is 1.0-1.7 dB, 19.0-26.0 dBm, and 10.6 dB with a gain flatness of +/- 0.35 dB respectively at a nominal power consumption of 480 mW across the band. At the same nominal power consumption, the frequency-agile LNA demonstrated a NF of 1.3, 1.4, and 1.2 dB; OIP3 of 23, 27, and 31 dBm; and gain of 13.6, 10.6, and 10.8 dB at 2.3 GHz, 4.7 GHz, and 5.8 GHz, respectively. The performance of the frequency-agile LNA is comparable to that of optimized narrowband LNAs at S- and C-bands. Compared to the multi-octave LNA, the frequency-agile LNA demonstrated better performance in gain and OIP3 at the frequencies of interest.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This paper reports the design and measured results of a multi-octave low noise amplifier (LNA) and a frequency-agile LNA utilizing a 0.25 μm gallium nitride (GaN) integrated circuit process technology for multi-band receiver applications. The demonstrated broadband LNA covers an instantaneous bandwidth from S- to C-bands (2.2-7.0 GHz), and the frequency-agile LNA cumulatively spans across 3 distinct bands (2.2-2.4 GHz, 4.4-5.0 GHz, and 5.0-6.7 GHz). The measured noise figure (NF), output third order intercept (OIP3), and peak gain of the wideband LNA is 1.0-1.7 dB, 19.0-26.0 dBm, and 10.6 dB with a gain flatness of +/- 0.35 dB respectively at a nominal power consumption of 480 mW across the band. At the same nominal power consumption, the frequency-agile LNA demonstrated a NF of 1.3, 1.4, and 1.2 dB; OIP3 of 23, 27, and 31 dBm; and gain of 13.6, 10.6, and 10.8 dB at 2.3 GHz, 4.7 GHz, and 5.8 GHz, respectively. The performance of the frequency-agile LNA is comparable to that of optimized narrowband LNAs at S- and C-bands. Compared to the multi-octave LNA, the frequency-agile LNA demonstrated better performance in gain and OIP3 at the frequencies of interest.