Broadband (100MHz -1GHz), High Power Active Circulator Architecture

Jongchan Kang, H. Sharifi, H. Moyer, E. Prophet
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引用次数: 1

Abstract

We report very wideband 100 MHz to 1 GHz active circulator with high power operation up to 30 dBm for the first time. In order to achieve broadband high power circulation and isolation, a new architecture is developed using low-loss RF choke concept and it is implemented on alumina substrate with mounted GaN HEMT devices along with other SMTs. The performed test shows minimum 15 to 20 dB isolation up to 30 dBm and 15 dB directivity up to 26 dBm across the band with 2.5~5 dB insertion loss for 15 dB of minimum directivity.
宽带(100MHz -1GHz),大功率有源环行器架构
我们首次报道了100 MHz至1 GHz的非常宽带有源环行器,其高功率工作高达30 dBm。为了实现宽带高功率循环和隔离,采用低损耗射频扼流圈概念开发了一种新的架构,并将其与安装的GaN HEMT器件以及其他smt器件一起实现在氧化铝基板上。所进行的测试表明,在30 dBm范围内的隔离度最小为15 ~ 20 dB,在26 dBm范围内的指向性最小为15 dB,插入损耗为2.5~5 dB。
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