{"title":"Broadband (100MHz -1GHz), High Power Active Circulator Architecture","authors":"Jongchan Kang, H. Sharifi, H. Moyer, E. Prophet","doi":"10.1109/CSICS.2016.7751029","DOIUrl":null,"url":null,"abstract":"We report very wideband 100 MHz to 1 GHz active circulator with high power operation up to 30 dBm for the first time. In order to achieve broadband high power circulation and isolation, a new architecture is developed using low-loss RF choke concept and it is implemented on alumina substrate with mounted GaN HEMT devices along with other SMTs. The performed test shows minimum 15 to 20 dB isolation up to 30 dBm and 15 dB directivity up to 26 dBm across the band with 2.5~5 dB insertion loss for 15 dB of minimum directivity.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"os-46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We report very wideband 100 MHz to 1 GHz active circulator with high power operation up to 30 dBm for the first time. In order to achieve broadband high power circulation and isolation, a new architecture is developed using low-loss RF choke concept and it is implemented on alumina substrate with mounted GaN HEMT devices along with other SMTs. The performed test shows minimum 15 to 20 dB isolation up to 30 dBm and 15 dB directivity up to 26 dBm across the band with 2.5~5 dB insertion loss for 15 dB of minimum directivity.