Electron Mobility and Self-Heat Modeling of AlN/GaN MIS-HEMTs with Embedded Source Field-Plate Structures

Abstract

Electron mobility and self-heating models for drain current simulations of AlN/GaN MIS-HEMTs have been derived for embedded source field-plate structures. They are scalable physical models. To apply the models to simulate power switching applications including DC-DC converters, the weak inversion to linear characteristics and the maximum drain current are important. The models are implemented in MIT Virtual Source model with modifications of Verilog-A source codes. The model parameters are extracted from measured data of the transistor test structures that we fabricated with an embedded source field-plate technology. The results show excellent agreements between measurements and simulations.