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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)最新文献

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Individual device active cooling for enhanced system-level power density and more uniform temperature distribution 单个设备主动冷却，增强系统级功率密度和更均匀的温度分布
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393705
Y. Zeng, A. Hussein, A. Castellazzi
{"title":"Individual device active cooling for enhanced system-level power density and more uniform temperature distribution","authors":"Y. Zeng, A. Hussein, A. Castellazzi","doi":"10.1109/ISPSD.2018.8393705","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393705","url":null,"abstract":"This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130030118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Cathode short structure to enhance the robustness of bidirectional power MOSFETs 阴极短结构增强双向功率mosfet的稳健性
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393707
T. Saxena, V. Khemka, M. Zitouni, Raghu Gupta, G. Qin, P. Dupuy, Mark Gibson
{"title":"Cathode short structure to enhance the robustness of bidirectional power MOSFETs","authors":"T. Saxena, V. Khemka, M. Zitouni, Raghu Gupta, G. Qin, P. Dupuy, Mark Gibson","doi":"10.1109/ISPSD.2018.8393707","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393707","url":null,"abstract":"Bidirectional power MOSFETs can block voltages of either polarity between the drain and the source. This makes them attractive for many applications as they offer a distinct cost advantage over the conventional power MOSFETs. However, bidirectional power MOSFETs suffer from poor robustness as the parasitic bipolar is easier to trigger when the body is routed out separately from the source. In this paper, we propose and demonstrate the concept of a cathode short which reduces the parasitic bipolar gain by degrading the injection efficiency of the base-emitter junction and consequently improves the robustness of the bidirectional power MOSFET. The parasitic bipolar gain is shown to reduce by more than a factor of 3 and the current switching capability is enhanced by a factor of ∼4.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116405587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
ISPSD: 30 Year journey in advancing power semiconductor technology ISPSD: 30年推进功率半导体技术的历程
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393589
A. Shibib, L. Lorenz, H. Ohashi
{"title":"ISPSD: 30 Year journey in advancing power semiconductor technology","authors":"A. Shibib, L. Lorenz, H. Ohashi","doi":"10.1109/ISPSD.2018.8393589","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393589","url":null,"abstract":"Celebrating the 30th Anniversary of ISPSD is a very special occasion to reflect on the origin and roots of the conference and how it came about to be the premier international conference on Power Semiconductor Devices and ICs. A review of the events that led to its formation and development is presented. Another aspect of this celebration is the review of the contributions of ISPSD to the Power Device technical community covering wide and diverse power device areas and applications throughout the 30 years history of ISPSD. The future prospects of Power Devices and ISPSD in the next years is briefly mentioned.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125490456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology 工业就绪的200mm p-GaN E-mode GaN-on-Si电源技术
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393658
N. Posthuma, S. You, S. Stoffels, D. Wellekens, H. Liang, M. Zhao, B. de Jaeger, K. Geens, N. Ronchi, S. Decoutere, P. Moens, A. Banerjee, H. Ziad, M. Tack
{"title":"An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology","authors":"N. Posthuma, S. You, S. Stoffels, D. Wellekens, H. Liang, M. Zhao, B. de Jaeger, K. Geens, N. Ronchi, S. Decoutere, P. Moens, A. Banerjee, H. Ziad, M. Tack","doi":"10.1109/ISPSD.2018.8393658","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393658","url":null,"abstract":"Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p<sup>+</sup> Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high V<inf>t</inf> of 2.8 V, low off-state leakage current and are dynamic R<inf>DS-ON</inf> free over the complete V<inf>DS</inf> and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at V<inf>GS</inf>=0 V, V<inf>DS</inf>=650 V.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131971326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control 27.5 kV 4H-SiC PiN二极管，具有空间调制JTE和载流子注入控制
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393686
K. Nakayama, T. Mizushima, K. Takenaka, A. Koyama, Y. Kiuchi, S. Matsunaga, H. Fujisawa, T. Hatakeyama, M. Takei, Y. Yonezawa, T. Kimoto, H. Okumura
{"title":"27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control","authors":"K. Nakayama, T. Mizushima, K. Takenaka, A. Koyama, Y. Kiuchi, S. Matsunaga, H. Fujisawa, T. Hatakeyama, M. Takei, Y. Yonezawa, T. Kimoto, H. Okumura","doi":"10.1109/ISPSD.2018.8393686","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393686","url":null,"abstract":"Ultra-high-voltage 4H-SiC PiN diode with a space-modulated junction termination extension and carrier injection control has been investigated. The introduction of a space-modulated region results in a high breakdown voltage of 27.5 kV, that is the highest among the values reported for 20 A class 4H-SiC PiN diodes. The simulated and measured forward characteristics of the 4H-SiC PiN diode with the carrier injection control are also reported. Forward voltage and on-resistance decrease as carrier lifetime increases. The introduction of carrier injection control at the anode and cathode sides results in reduction in carrier concentration. The measured characteristics exhibit good correlation with simulated results. Based on these results, we can confirm the effect of carrier lifetime on electrical characteristics.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"253 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134338107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs 1.2 kV SiC功率mosfet标称动态性能参数分析
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393689
R. Stark, Ivana Kovačević-Badstübner, A. Tsibizov, Bhagyalakshmi Kakarla, Yanrui Jü, Beat Jaeger, T. Ziemann, U. Grossner
{"title":"Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs","authors":"R. Stark, Ivana Kovačević-Badstübner, A. Tsibizov, Bhagyalakshmi Kakarla, Yanrui Jü, Beat Jaeger, T. Ziemann, U. Grossner","doi":"10.1109/ISPSD.2018.8393689","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393689","url":null,"abstract":"A good understanding of internal MOSFET capacitances is required in order to accurately model the dynamic characteristics of SiC MOSFETs. MOSFET compact models used to simulate and optimize power converter systems have to take into account the effects of non-linear voltage-dependent internal MOSFET capacitances correctly. In this paper, the individual influence of the voltage-dependent drain-source capacitance Cds and the drain-gate capacitance Cdg on the MOSFET dynamics is investigated in detail. A comprehensive analysis of the switching performance of 1.2 kV SiC power MOSFETs with respect to Cds and Cdg by means of a physics-based compact model, TCAD modeling, and the switching measurements of a 1.2 kV 80 mO SiC power MOSFET is presented. It is demonstrated that the non-linearity of Cgd impacts the turn-off delay time td, OFF, while the non-linearity of Cds does not have a significant impact on the switching transients.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133131989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd 超低RonQgd深p封装4H-SiC沟槽mosfet
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393598
Y. Ebihara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, Shoji Mizuno, T. Yamamoto, K. Tsuruta
{"title":"Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd","authors":"Y. Ebihara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, Shoji Mizuno, T. Yamamoto, K. Tsuruta","doi":"10.1109/ISPSD.2018.8393598","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393598","url":null,"abstract":"Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"503 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133178410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Improvement of power cycling reliability of 3.3kV full-SiC power modules with sintered copper technology for Tj, max=175°C 采用烧结铜技术提高3.3kV全sic功率模块的功率循环可靠性(Tj, max=175℃
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393701
K. Yasui, S. Hayakawa, Masato Nakamura, Daisuke Kawase, T. Ishigaki, K. Sasaki, Toshihito Tabata, T. Morita, M. Sagawa, H. Matsushima, Toshiyuki Kobayashi
{"title":"Improvement of power cycling reliability of 3.3kV full-SiC power modules with sintered copper technology for Tj, max=175°C","authors":"K. Yasui, S. Hayakawa, Masato Nakamura, Daisuke Kawase, T. Ishigaki, K. Sasaki, Toshihito Tabata, T. Morita, M. Sagawa, H. Matsushima, Toshiyuki Kobayashi","doi":"10.1109/ISPSD.2018.8393701","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393701","url":null,"abstract":"Higher maximum junction temperature operation requires higher power cycling reliability especially for silicon carbide power modules. In this work, with the help of a novel sintered copper die attach technology, 3.3kV/450A full-SiC power modules for up to 175°C maximum junction temperature were developed. Demonstrated power cycling lifetime shows an improvement of six times conventional Pb-rich solder die attach modules.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125475454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum 通过预测铂的TCAD模拟来调整硅功率二极管的性能
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393617
M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt
{"title":"Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum","authors":"M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt","doi":"10.1109/ISPSD.2018.8393617","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393617","url":null,"abstract":"Today's silicon power diodes typically make use of platinum to adjust the charge carrier lifetime, which influences the device performance. In this work, we present how platinum in silicon can be modelled in terms of process and device simulation in a predictive manner. Furthermore, we demonstrate how this simulation tool can be used to predict performance tradeoffs which allow the tailoring of the electrical device performance.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"220 S713","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132904463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 质子辐照在AlGaN/GaN晶体管中的动态控制
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393610
A. Tajalli, A. Stockman, M. Meneghini, S. Mouhoubi, A. Banerjee, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, M. Tack, B. Bakeroot, P. Moens, G. Meneghesso
{"title":"Dynamic-ron control via proton irradiation in AlGaN/GaN transistors","authors":"A. Tajalli, A. Stockman, M. Meneghini, S. Mouhoubi, A. Banerjee, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, M. Tack, B. Bakeroot, P. Moens, G. Meneghesso","doi":"10.1109/ISPSD.2018.8393610","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393610","url":null,"abstract":"Dynamic-Ron is still a key issue in GaN power HEMTs. Recently [2] we demonstrated that proton irradiation is an effective and controllable way to reduce dynamic-Ron in AlGaN/GaN HEMTs; this beneficial effect is ascribed to the minute increase in the leakage of the uid-GaN layer, promoting charge de-trapping from the buffer. The effect is dependent on LGD, shorter LGD is better. The shorter LGD corresponds to a shorter region for trapping, and therefore the dynamic-Ron is not strong when LGD is short. We demonstrate that samples submitted to proton irradiation at high fluences (1.5×1014 p/cm2, 3 MeV) show a complete suppression of dynamic-Ron (complete voltage range, 150 °C), without significant modifications in the other device parameters. Combined pulsed measurements, drain current transient (DCT) characterization and electroluminescence (EL) analysis are used to explain the experimental data.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122180151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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