通过预测铂的TCAD模拟来调整硅功率二极管的性能

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393617

M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt

{"title":"通过预测铂的TCAD模拟来调整硅功率二极管的性能","authors":"M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt","doi":"10.1109/ISPSD.2018.8393617","DOIUrl":null,"url":null,"abstract":"Today's silicon power diodes typically make use of platinum to adjust the charge carrier lifetime, which influences the device performance. In this work, we present how platinum in silicon can be modelled in terms of process and device simulation in a predictive manner. Furthermore, we demonstrate how this simulation tool can be used to predict performance tradeoffs which allow the tailoring of the electrical device performance.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"220 S713","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum\",\"authors\":\"M. Hauf, C. Sandow, F. Niedernostheide, G. Schmidt\",\"doi\":\"10.1109/ISPSD.2018.8393617\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Today's silicon power diodes typically make use of platinum to adjust the charge carrier lifetime, which influences the device performance. In this work, we present how platinum in silicon can be modelled in terms of process and device simulation in a predictive manner. Furthermore, we demonstrate how this simulation tool can be used to predict performance tradeoffs which allow the tailoring of the electrical device performance.\",\"PeriodicalId\":166809,\"journal\":{\"name\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"220 S713\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2018.8393617\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

目前的硅功率二极管通常使用铂来调整载流子寿命，这会影响器件的性能。在这项工作中，我们介绍了如何以预测的方式在工艺和器件模拟方面对硅中的铂进行建模。此外，我们演示了如何使用此仿真工具来预测性能权衡，从而允许定制电气设备性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum

Today's silicon power diodes typically make use of platinum to adjust the charge carrier lifetime, which influences the device performance. In this work, we present how platinum in silicon can be modelled in terms of process and device simulation in a predictive manner. Furthermore, we demonstrate how this simulation tool can be used to predict performance tradeoffs which allow the tailoring of the electrical device performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

自引率

0.00%

发文量