K. Yasui, S. Hayakawa, Masato Nakamura, Daisuke Kawase, T. Ishigaki, K. Sasaki, Toshihito Tabata, T. Morita, M. Sagawa, H. Matsushima, Toshiyuki Kobayashi
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Improvement of power cycling reliability of 3.3kV full-SiC power modules with sintered copper technology for Tj, max=175°C
Higher maximum junction temperature operation requires higher power cycling reliability especially for silicon carbide power modules. In this work, with the help of a novel sintered copper die attach technology, 3.3kV/450A full-SiC power modules for up to 175°C maximum junction temperature were developed. Demonstrated power cycling lifetime shows an improvement of six times conventional Pb-rich solder die attach modules.
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