27.5 kV 4H-SiC PiN二极管，具有空间调制JTE和载流子注入控制

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393686

K. Nakayama, T. Mizushima, K. Takenaka, A. Koyama, Y. Kiuchi, S. Matsunaga, H. Fujisawa, T. Hatakeyama, M. Takei, Y. Yonezawa, T. Kimoto, H. Okumura

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引用次数: 13

摘要

研究了具有空间调制结端延伸和载流子注入控制的超高压4H-SiC PiN二极管。引入空间调制区域导致27.5 kV的高击穿电压，这是20个a类4H-SiC PiN二极管中报道的最高值。本文还报道了具有载流子注入控制的4H-SiC引脚二极管的正向特性的仿真和实测结果。正向电压和导通电阻随载流子寿命的增加而减小。在阳极和阴极两侧引入载流子注入控制导致载流子浓度降低。实测特性与模拟结果具有良好的相关性。基于这些结果，我们可以证实载流子寿命对电特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Ultra-high-voltage 4H-SiC PiN diode with a space-modulated junction termination extension and carrier injection control has been investigated. The introduction of a space-modulated region results in a high breakdown voltage of 27.5 kV, that is the highest among the values reported for 20 A class 4H-SiC PiN diodes. The simulated and measured forward characteristics of the 4H-SiC PiN diode with the carrier injection control are also reported. Forward voltage and on-resistance decrease as carrier lifetime increases. The introduction of carrier injection control at the anode and cathode sides results in reduction in carrier concentration. The measured characteristics exhibit good correlation with simulated results. Based on these results, we can confirm the effect of carrier lifetime on electrical characteristics.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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