超低RonQgd深p封装4H-SiC沟槽mosfet

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393598

Y. Ebihara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, Shoji Mizuno, T. Yamamoto, K. Tsuruta

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引用次数: 14

摘要

提出了一种深p封装4H-SÌC沟槽MOSFET。所制备的阻断电压为1800V的MOSFET显示出超低的RonQgd为133 nCmΩ。为了降低开关损耗，对结构进行了优化。通过平衡的JFET电阻和栅极漏极电容，获得了改进的开关特性。

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Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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