N. Posthuma, S. You, S. Stoffels, D. Wellekens, H. Liang, M. Zhao, B. de Jaeger, K. Geens, N. Ronchi, S. Decoutere, P. Moens, A. Banerjee, H. Ziad, M. Tack
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引用次数: 58
摘要
增强模式650V额定p- gan栅极hemt采用工业无金工艺在200 mm p+ Si衬底上制造。该器件具有真正的电子模式性能，具有2.8 V的高Vt，低的断开状态泄漏电流，并且在整个VDS和温度范围内无动态RDS-ON。高温反偏置(HTRB)测试是在晶圆上和封装后进行的。在VGS=0 V, VDS=650 V的条件下，首次在200 mm Si衬底上实现了650 V功率hemt，显示出符合工业标准的器件性能并通过了1008小时的可靠性测试。
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p+ Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high Vt of 2.8 V, low off-state leakage current and are dynamic RDS-ON free over the complete VDS and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at VGS=0 V, VDS=650 V.
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