Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

Dynamic-Ron is still a key issue in GaN power HEMTs. Recently [2] we demonstrated that proton irradiation is an effective and controllable way to reduce dynamic-Ron in AlGaN/GaN HEMTs; this beneficial effect is ascribed to the minute increase in the leakage of the uid-GaN layer, promoting charge de-trapping from the buffer. The effect is dependent on LGD, shorter LGD is better. The shorter LGD corresponds to a shorter region for trapping, and therefore the dynamic-Ron is not strong when LGD is short. We demonstrate that samples submitted to proton irradiation at high fluences (1.5×1014 p/cm2, 3 MeV) show a complete suppression of dynamic-Ron (complete voltage range, 150 °C), without significant modifications in the other device parameters. Combined pulsed measurements, drain current transient (DCT) characterization and electroluminescence (EL) analysis are used to explain the experimental data.