质子辐照在AlGaN/GaN晶体管中的动态控制

A. Tajalli, A. Stockman, M. Meneghini, S. Mouhoubi, A. Banerjee, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, M. Tack, B. Bakeroot, P. Moens, G. Meneghesso
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引用次数: 5

摘要

动态ron仍然是GaN功率hemt中的一个关键问题。最近[2]我们证明了质子辐照是降低AlGaN/GaN hemt中动态ron的有效和可控的方法;这种有益的效果归因于液体氮化镓层泄漏的微小增加,促进了电荷从缓冲液中释放出来。效果与LGD有关,LGD越短越好。较短的LGD对应较短的捕获区域,因此LGD较短时动态ron不强。我们证明了样品在高通量(1.5×1014 p/cm2, 3 MeV)下进行质子辐照,显示出动态ron(完整电压范围,150°C)的完全抑制,而其他器件参数没有明显改变。结合脉冲测量、漏极电流瞬态(DCT)表征和电致发光(EL)分析来解释实验数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Dynamic-Ron is still a key issue in GaN power HEMTs. Recently [2] we demonstrated that proton irradiation is an effective and controllable way to reduce dynamic-Ron in AlGaN/GaN HEMTs; this beneficial effect is ascribed to the minute increase in the leakage of the uid-GaN layer, promoting charge de-trapping from the buffer. The effect is dependent on LGD, shorter LGD is better. The shorter LGD corresponds to a shorter region for trapping, and therefore the dynamic-Ron is not strong when LGD is short. We demonstrate that samples submitted to proton irradiation at high fluences (1.5×1014 p/cm2, 3 MeV) show a complete suppression of dynamic-Ron (complete voltage range, 150 °C), without significant modifications in the other device parameters. Combined pulsed measurements, drain current transient (DCT) characterization and electroluminescence (EL) analysis are used to explain the experimental data.
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