单个设备主动冷却，增强系统级功率密度和更均匀的温度分布

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393705

Y. Zeng, A. Hussein, A. Castellazzi

{"title":"单个设备主动冷却，增强系统级功率密度和更均匀的温度分布","authors":"Y. Zeng, A. Hussein, A. Castellazzi","doi":"10.1109/ISPSD.2018.8393705","DOIUrl":null,"url":null,"abstract":"This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Individual device active cooling for enhanced system-level power density and more uniform temperature distribution\",\"authors\":\"Y. Zeng, A. Hussein, A. Castellazzi\",\"doi\":\"10.1109/ISPSD.2018.8393705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.\",\"PeriodicalId\":166809,\"journal\":{\"name\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2018.8393705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种单机主动冷却系统平衡系统级功率密度温度分布的方法。用3L-ANPC GaN逆变器进行了测试，证明了该逆变器在多级系统中的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Individual device active cooling for enhanced system-level power density and more uniform temperature distribution

This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

自引率

0.00%

发文量