N. Posthuma, S. You, S. Stoffels, D. Wellekens, H. Liang, M. Zhao, B. de Jaeger, K. Geens, N. Ronchi, S. Decoutere, P. Moens, A. Banerjee, H. Ziad, M. Tack
{"title":"An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology","authors":"N. Posthuma, S. You, S. Stoffels, D. Wellekens, H. Liang, M. Zhao, B. de Jaeger, K. Geens, N. Ronchi, S. Decoutere, P. Moens, A. Banerjee, H. Ziad, M. Tack","doi":"10.1109/ISPSD.2018.8393658","DOIUrl":null,"url":null,"abstract":"Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p<sup>+</sup> Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high V<inf>t</inf> of 2.8 V, low off-state leakage current and are dynamic R<inf>DS-ON</inf> free over the complete V<inf>DS</inf> and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at V<inf>GS</inf>=0 V, V<inf>DS</inf>=650 V.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"58","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 58
Abstract
Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p+ Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high Vt of 2.8 V, low off-state leakage current and are dynamic RDS-ON free over the complete VDS and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at VGS=0 V, VDS=650 V.
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