2012 IEEE International Interconnect Technology Conference最新文献_第5页

56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via 56纳米螺距铜双damascene互连与三螺距拆分金属和双螺距拆分通孔

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251637

J. Chen, C. Waskiewicz, S. Fan, S. Halle, C. Koay, Yongan Xu, N. Saulnier, Chiahsun Tseng, Y. Yin, Y. Mignot, M. Beard, B. Morris, D. Horak, S. Mignot, H. Shobha, M. Sankarapandian, O. van der Straten, J. Kelly, D. Canaperi, E. Mclellan, C. Boye, T. Levin, Juntao Li, J. Demarest, S. Choi, E. Huang, L. Liemann, B. Haran, J. Arnold, M. Colburn, L. Clevenger, T. Spooner

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引用次数: 5

Low-k interconnect stack with metal-insulator-metal capacitors for 22nm high volume manufacturing 低k互连堆栈与金属绝缘体-金属电容器22nm大批量生产

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251663

D. Ingerly, A. Agrawal, R. Ascázubi, A. Blattner, M. Buehler, V. Chikarmane, B. Choudhury, F. Cinnor, C. Ege, C. Ganpule, T. Glassman, R. Grover, P. Hentges, J. Hicks, D. Jones, A. Kandas, H. Khan, N. Lazo, K. Lee, H. Liu, A. Madhavan, R. McFadden, T. Mule, D. Parsons, P. Parthangal, S. Rangaraj, D. Rao, J. Roesler, A. Schmitz, M. Sharma, J. Shin, Y. Shusterman, N. Speer, P. Tiwari, G. Wang, P. Yashar, K. Mistry

引用次数: 46

A novel LWR reduction approach to enhance reliability performance in ultra-thin barrier/porous low-k (K<2.4) interconnect 一种新的LWR降低方法，提高超薄屏障/多孔低k (K<2.4)互连的可靠性性能

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251569

C. W. Lu, T. Tsai, Y. Chang, C. Tsai, S. Singh, T. Huang, H. Yao, C. J. Lee, T. Bao, S. Shue, C. H. Yu

引用次数: 1

What lies ahead for interconnects and devices 互连和设备的未来是什么

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251563

M. Mayberry

引用次数: 5

Novel miniaturized packaging for implantable electronic devices 可植入电子设备的新型小型化封装

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251669

K. Qian, M. O. de Beeck, G. Bryce, K. Malachowski, C. van Hoof

引用次数: 4

Electrical performances and quality investigations of integrated bonded structures and TSVs for 3D interconnects 三维互连用集成键合结构和tsv的电性能和质量研究

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251636

K. N. Chen, Y. J. Chang, C. Ko, S. Hsu, H. Y. Chen, C. Hsiao, T. Yu, Y. -. Chen, W. Lo

引用次数: 0

Inline Low-k damage detection of Cu/Low-k interconnect using micro beam IR method 微束红外法在线检测Cu/Low-k互连的低k损伤

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251642

K. Goto, Y. Oka, N. Miura, M. Matsuura, K. Asai

引用次数: 0

Novel Cu reflow seed process for Cu/low-k 64nm pitch dual damascene interconnects and beyond 铜/低钾64nm双硅互连的新型铜回流制粒工艺

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251656

K. Motoyama, O. van der Straten, H. Tomizawa, J. Maniscalco, S. T. Chen

引用次数: 0

Photoemission study of the growth of Mn silicate barrier layers on ultra low-k carbon doped oxide surfaces 锰硅酸盐阻挡层在超低k掺杂碳氧化物表面生长的光发射研究

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251643

J. Bogan, P. Casey, A. McCoy, G. Hughes

引用次数: 4

Improved statistical analysis at low failure rates in Cu electromigration using an innovative multilink test structure 采用创新的多链路测试结构，改进了铜电迁移中低故障率的统计分析

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251668

F. Bana, D. Ney, L. Arnaud, Y. Wouters

引用次数: 4