Inline Low-k damage detection of Cu/Low-k interconnect using micro beam IR method

It has become more serious concern to quantify Low-k damage in Cu/Low-k interconnects. We investigated the relationship between the amount of OH group in Low-k material obtained from micro-beam IR method and the interconnect capacitance. And it was found that there is good correlation among them. Additionally, the micro-beam IR method sensitively detected modifications of amount of OH group for several kinds of treatment processes except for the NH3 plasma treatment prior to Cu diffusion barrier dielectric deposition.