发布求助
文献互助 智能选刊 最新文献

2012 IEEE International Interconnect Technology Conference最新文献

筛选
英文 中文
Tungsten plug corrosion on B2H6-based nucleation layer induced by WCMP process WCMP工艺致b2h6基成核层钨塞腐蚀
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251649
Kuang-Wei Chen, Meng-Tsung Ko, Chun-Fu Chen, Yung-tai Hung, Chin-Ta Su, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
{"title":"Tungsten plug corrosion on B2H6-based nucleation layer induced by WCMP process","authors":"Kuang-Wei Chen, Meng-Tsung Ko, Chun-Fu Chen, Yung-tai Hung, Chin-Ta Su, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/IITC.2012.6251649","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251649","url":null,"abstract":"The topic of this paper is to identify tungsten plug corrosion issue at the interface of barrier metal and W bulk in W-CMP process. Two types of nucleation layers in W-CVD deposition process - SiH<sub>4</sub> and B<sub>2</sub>H<sub>6</sub> based were studied. The B<sub>2</sub>H<sub>6</sub> based nucleation W will induce W corrosion. However, SiH<sub>4</sub> based nucleation W does not have the issue. The static etch rate, electrochemical properties and removal rate (R.R.) of two types W-CMP slurries and SiH<sub>4</sub> and B<sub>2</sub>H<sub>6</sub> based nucleation W were evaluated. It has been demonstrated that the B<sub>2</sub>H<sub>6</sub> based nucleation film has much higher intensity of static etching on various W slurries. The B<sub>2</sub>H<sub>6</sub> based nucleation layer is weak than SiH<sub>4</sub> based, and it induces corrosion during W-CMP process.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"413 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123050336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multi-layer graphene wire grown by annealing sputtered amorphous carbon 退火溅射非晶碳生长多层石墨烯线
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251671
M. Sato, M. Takahashi, H. Nakano, T. Murakami, A. Kawabata, M. Nihei, N. Yokoyama
{"title":"Multi-layer graphene wire grown by annealing sputtered amorphous carbon","authors":"M. Sato, M. Takahashi, H. Nakano, T. Murakami, A. Kawabata, M. Nihei, N. Yokoyama","doi":"10.1109/IITC.2012.6251671","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251671","url":null,"abstract":"We have fabricated multi-layer graphene directly on SiO2 by annealing sputtered amorphous carbon with a Co catalyst without use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure, aligned to the Co (111) surface. An MLG wire can sustain a high current density of 107 A/cm2 which is over one order of magnitude higher than that of a Cu wire.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122728467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Successful recovery of moisture-induced TDDB degradation for Cu/ULK(k=2.5) BEOL interconnect Cu/ULK(k=2.5) BEOL互连中水分诱导TDDB降解的成功恢复
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251653
S. Ahn, Tae-Soo Kim, V. H. Nguyen, OkHee Park, K. Han, Jang-Hee Lee, Jongmyeong Lee, Gilheyun Choi, Ho-Kyu Kang, C. Chung
{"title":"Successful recovery of moisture-induced TDDB degradation for Cu/ULK(k=2.5) BEOL interconnect","authors":"S. Ahn, Tae-Soo Kim, V. H. Nguyen, OkHee Park, K. Han, Jang-Hee Lee, Jongmyeong Lee, Gilheyun Choi, Ho-Kyu Kang, C. Chung","doi":"10.1109/IITC.2012.6251653","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251653","url":null,"abstract":"Cu/ULK(k=2.5) dual Damascene back end of line(BEOL) dielectric degradation was studied with respect to post Cu CMP delay prior to dielectric diffusion barrier deposition. The threshold of the delay time was observed beyond which line-to-line leakage current increased rapidly while the dielectric breakdown voltage decreased. This air exposure-dependent degradation was attributed to moisture absorption by damaged ULK during integration, and caused premature TDDB (time-dependent dielectric breakdown) failure. It was found that combination of moisture removal by damage-free UV and mild plasma treatment was able to restore dielectric breakdown voltage as well as TDDB time to failure even well past the threshold of delay time.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129947854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Scaling in the third dimension -prospects for silicon-based interposer and 3D integration 三维缩放——硅基中间体和三维集成的前景
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251658
S. Iyer
{"title":"Scaling in the third dimension -prospects for silicon-based interposer and 3D integration","authors":"S. Iyer","doi":"10.1109/IITC.2012.6251658","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251658","url":null,"abstract":"Classical constant field scaling has reached a point of diminishing returns as a result of fundamental limitations, increased process complexity and lithographic challenges. Sibased passive interposers offer the possibility of integrating heterogeneous technologies on a silicon substrate as well as the possibility synthesizing very large chips with silicon like latencies. 3D die stacking allows for an additional integration of two or more functional die with a die to die interconnect density that allows for a variety of possibilities all the way from power and I/O integration, to block and macro level integration, and in limit circuit level integration across strata. In this talk we will share the work we have doing on both interposers integrating SiGe analog die with 45nm ASICs as well as the integration of logic and memory in some key embodiments. We will discuss the challenges we face in technology, reliability, thermo-mechanical stability, design and test. Finally, we will discuss options that allow for higher levels of integration using wafer level bonding technology.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114079829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical properties of SiCOH film related to CPI and High Load Indentation test of real Cu/Low-k structure with bumps 与CPI相关的SiCOH薄膜力学性能及带凸起的真实Cu/低k结构的高负荷压痕试验
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251640
T. Usami, T. Nakamura, N. Fujimoto, H. Aizawa, I. Yashima, K. Fujii
{"title":"Mechanical properties of SiCOH film related to CPI and High Load Indentation test of real Cu/Low-k structure with bumps","authors":"T. Usami, T. Nakamura, N. Fujimoto, H. Aizawa, I. Yashima, K. Fujii","doi":"10.1109/IITC.2012.6251640","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251640","url":null,"abstract":"Relation between mechanical properties of SiCOH film and white bump failures has been investigated. Among these mechanical properties, the fracture toughness of SiCOH film was related to the white bump failures. In addition, to simplify the complex Chip Package Interaction (CPI) tests, we proposed High Load Indentation (HiLI) test as a novel measurement of toughness for a real structure of multilayer Cu/Low-k interconnects with Pb-free bump. We found that the critical load by HiLI test is related to white bump failure.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"412 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116275862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode 利用不同Ru(0)金属有机前驱体和分子O2原子层沉积具有增强成核的Ru薄膜:在Cu电镀和电容器电极种子层中的应用
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251564
Soo‐Hyun Kim
{"title":"Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode","authors":"Soo‐Hyun Kim","doi":"10.1109/IITC.2012.6251564","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251564","url":null,"abstract":"Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O2. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126267999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Agglomeration and dissociation of vacancies in electroless deposited Cu films studied by monoenergetic positron beams 用单能正电子束研究化学沉积Cu薄膜中空位的聚集和解离
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251654
A. Uedono, Y. Dordi, S. Li, G. Mizunaga, K. Tenjinbayashi, N. Oshima, R. Suzuki
{"title":"Agglomeration and dissociation of vacancies in electroless deposited Cu films studied by monoenergetic positron beams","authors":"A. Uedono, Y. Dordi, S. Li, G. Mizunaga, K. Tenjinbayashi, N. Oshima, R. Suzuki","doi":"10.1109/IITC.2012.6251654","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251654","url":null,"abstract":"Positron annihilation is used to probe vacancy-type defects in electroless deposited (ELD) Cu films on Ta/TaN/SiO2/Si. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons are measured for ELD-Cu fabricated with different residual impurity concentrations using a novel electrolyte. For as-deposited films, the major species of vacancy-type defects are identified as vacancy complexes (V3-V4) and larger vacancy clusters (~V10). After annealing around 200°C, they diffuse toward the surface and aggregate. The same trend is observed for sulfur, suggesting the formation of complexes between sulfur and vacancies. Although the defects near the surface anneal out above 300°C, the defect concentration near the Cu/barrier-metal interface is high even after annealing above 600°C, suggesting an accumulation of vacancy-impurity complexes. The observed defect reactions are attributed to the suppression of the vacancy diffusion to sinks by the formation of impurity-vacancy complexes. Through careful control of the concentration of residual impurities and their species, these electroless Cu films have a high potential to suppress the formation of voids/hillocks caused by defect migration.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125250906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomistic method for analysis of electromigration 电迁移分析的原子法
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251648
H. Ceric, R. L. de Orio, W. Zisser, S. Selberherr
{"title":"Atomistic method for analysis of electromigration","authors":"H. Ceric, R. L. de Orio, W. Zisser, S. Selberherr","doi":"10.1109/IITC.2012.6251648","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251648","url":null,"abstract":"The reliability of interconnects in modern integrated circuits is determined by the magnitude and direction of the effective valence for electromigration (EM). The effective valence depends on local atomistic configurations. In order to study EM on atomistic level an application of ab initio methods is a necessity. In this work a novel method for an ab initio calculation of the effective valence for electromigration is proposed and its application on the analysis of EM behavior is presented.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134250630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability assessment of tungsten via to copper interconnect for novel memory device 新型存储器件钨铜通孔互连可靠性评价
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251650
A. Teng, R. Tu, Ming-Yi Lee, A. Kuo, A. Dai, X. C. Lee, T. Wen, Chih-Yuan Lu
{"title":"Reliability assessment of tungsten via to copper interconnect for novel memory device","authors":"A. Teng, R. Tu, Ming-Yi Lee, A. Kuo, A. Dai, X. C. Lee, T. Wen, Chih-Yuan Lu","doi":"10.1109/IITC.2012.6251650","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251650","url":null,"abstract":"The reliability assessment of tungsten via to copper interconnect were investigated. Just-landing and un-landing via structure showed similar EM characteristics to full-landing structure. The activation energy of EM is about 0.86 and current density exponent is about 1.9, which means the mechanisms of interfacial diffusivity and line depletion stress. The resistance shifting of all splits was no more than 1% after 1000H SM test. The un-landing via of over-etching formation showed good resistivity and reliability that might be one of the solutions for gaining the process pitch in low-cost memory applications.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128864410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Uncured ELK as a chemical mechanical planarization stop layer in Cu/XLK interconnect 未固化的ELK作为Cu/XLK互连中的化学机械平化停止层
2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251567
Y. H. Wu, M. H. Lee, C. Tsai, H. Lee, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu
{"title":"Uncured ELK as a chemical mechanical planarization stop layer in Cu/XLK interconnect","authors":"Y. H. Wu, M. H. Lee, C. Tsai, H. Lee, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu","doi":"10.1109/IITC.2012.6251567","DOIUrl":"https://doi.org/10.1109/IITC.2012.6251567","url":null,"abstract":"A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by removing porogen with post CMP treatment, hence its impact on overall's film capacitance is minimized.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115449230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信