Multi-layer graphene wire grown by annealing sputtered amorphous carbon

M. Sato, M. Takahashi, H. Nakano, T. Murakami, A. Kawabata, M. Nihei, N. Yokoyama
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Abstract

We have fabricated multi-layer graphene directly on SiO2 by annealing sputtered amorphous carbon with a Co catalyst without use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure, aligned to the Co (111) surface. An MLG wire can sustain a high current density of 107 A/cm2 which is over one order of magnitude higher than that of a Cu wire.
退火溅射非晶碳生长多层石墨烯线
我们在Co催化剂上通过退火溅射无定形碳直接在SiO2上制备了多层石墨烯,而无需使用复杂的转移工艺。结构分析表明,石墨烯片形成外延结构,与Co(111)表面对齐。MLG导线可以承受107 a /cm2的高电流密度,比铜导线高出一个数量级以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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