Y. H. Wu, M. H. Lee, C. Tsai, H. Lee, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu
{"title":"Uncured ELK as a chemical mechanical planarization stop layer in Cu/XLK interconnect","authors":"Y. H. Wu, M. H. Lee, C. Tsai, H. Lee, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu","doi":"10.1109/IITC.2012.6251567","DOIUrl":null,"url":null,"abstract":"A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by removing porogen with post CMP treatment, hence its impact on overall's film capacitance is minimized.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by removing porogen with post CMP treatment, hence its impact on overall's film capacitance is minimized.