{"title":"利用不同Ru(0)金属有机前驱体和分子O2原子层沉积具有增强成核的Ru薄膜:在Cu电镀和电容器电极种子层中的应用","authors":"Soo‐Hyun Kim","doi":"10.1109/IITC.2012.6251564","DOIUrl":null,"url":null,"abstract":"Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O2. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode\",\"authors\":\"Soo‐Hyun Kim\",\"doi\":\"10.1109/IITC.2012.6251564\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O2. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251564\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251564","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode
Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O2. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.
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