Kuang-Wei Chen, Meng-Tsung Ko, Chun-Fu Chen, Yung-tai Hung, Chin-Ta Su, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
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Tungsten plug corrosion on B2H6-based nucleation layer induced by WCMP process
The topic of this paper is to identify tungsten plug corrosion issue at the interface of barrier metal and W bulk in W-CMP process. Two types of nucleation layers in W-CVD deposition process - SiH4 and B2H6 based were studied. The B2H6 based nucleation W will induce W corrosion. However, SiH4 based nucleation W does not have the issue. The static etch rate, electrochemical properties and removal rate (R.R.) of two types W-CMP slurries and SiH4 and B2H6 based nucleation W were evaluated. It has been demonstrated that the B2H6 based nucleation film has much higher intensity of static etching on various W slurries. The B2H6 based nucleation layer is weak than SiH4 based, and it induces corrosion during W-CMP process.
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