与CPI相关的SiCOH薄膜力学性能及带凸起的真实Cu/低k结构的高负荷压痕试验

T. Usami, T. Nakamura, N. Fujimoto, H. Aizawa, I. Yashima, K. Fujii
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引用次数: 1

摘要

研究了SiCOH薄膜的力学性能与白色凸起失效的关系。在这些力学性能中,SiCOH薄膜的断裂韧性与白色凸起失效有关。此外,为了简化复杂的芯片封装相互作用(CPI)测试,我们提出了高负载压痕(HiLI)测试作为一种新的韧性测量方法,用于多层Cu/Low-k互连的真实结构。通过HiLI试验发现临界载荷与白凹凸失效有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanical properties of SiCOH film related to CPI and High Load Indentation test of real Cu/Low-k structure with bumps
Relation between mechanical properties of SiCOH film and white bump failures has been investigated. Among these mechanical properties, the fracture toughness of SiCOH film was related to the white bump failures. In addition, to simplify the complex Chip Package Interaction (CPI) tests, we proposed High Load Indentation (HiLI) test as a novel measurement of toughness for a real structure of multilayer Cu/Low-k interconnects with Pb-free bump. We found that the critical load by HiLI test is related to white bump failure.
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