Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode

Abstract

Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O2. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.