未固化的ELK作为Cu/XLK互连中的化学机械平化停止层

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI:10.1109/IITC.2012.6251567

Y. H. Wu, M. H. Lee, C. Tsai, H. Lee, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu

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引用次数: 0

摘要

本文提出了一种利用未固化的极低钾(low-K)制备铜CMP停止层的新方法，以改善铜/超低钾(XLK)互连的晶圆内Rs均匀性。该CMP停止层可以通过后CMP处理去除孔隙转化为低介电常数膜，因此其对整体膜电容的影响最小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Uncured ELK as a chemical mechanical planarization stop layer in Cu/XLK interconnect

A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by removing porogen with post CMP treatment, hence its impact on overall's film capacitance is minimized.

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2012 IEEE International Interconnect Technology Conference

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