K. N. Chen, Y. J. Chang, C. Ko, S. Hsu, H. Y. Chen, C. Hsiao, T. Yu, Y. -. Chen, W. Lo
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Electrical performances and quality investigations of integrated bonded structures and TSVs for 3D interconnects
The integration of TSVs and bonded structures is an important topic in 3D integration. In this study, fine Cu TSVs and various bonded structures, including Cu/Sn micro-bumps, Cu bond pads, and Cu alloy structures, are integrated and demonstrated. Electrical performances, morphology investigations, and reliability investigations of TSVs, bonded bumps/pads, and the integrated structures are studied. For a wellfabricated 3D interconnect structure, excellent electrical performance and mechanical strength with stable reliability behavior can be achieved.
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