C. W. Lu, T. Tsai, Y. Chang, C. Tsai, S. Singh, T. Huang, H. Yao, C. J. Lee, T. Bao, S. Shue, C. H. Yu
{"title":"一种新的LWR降低方法，提高超薄屏障/多孔低k (K<2.4)互连的可靠性性能","authors":"C. W. Lu, T. Tsai, Y. Chang, C. Tsai, S. Singh, T. Huang, H. Yao, C. J. Lee, T. Bao, S. Shue, C. H. Yu","doi":"10.1109/IITC.2012.6251569","DOIUrl":null,"url":null,"abstract":"This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% for EUV PR. Furthermore, the influence of LWR on reliability was evaluated on 45nm line-width test vehicle. A boost of 10 times Time Dependent Dielectric Breakdown (TDDB) and 2 times Eelectrical Migration (EM) was demonstrated.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel LWR reduction approach to enhance reliability performance in ultra-thin barrier/porous low-k (K<2.4) interconnect\",\"authors\":\"C. W. Lu, T. Tsai, Y. Chang, C. Tsai, S. Singh, T. Huang, H. Yao, C. J. Lee, T. Bao, S. Shue, C. H. Yu\",\"doi\":\"10.1109/IITC.2012.6251569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% for EUV PR. Furthermore, the influence of LWR on reliability was evaluated on 45nm line-width test vehicle. A boost of 10 times Time Dependent Dielectric Breakdown (TDDB) and 2 times Eelectrical Migration (EM) was demonstrated.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel LWR reduction approach to enhance reliability performance in ultra-thin barrier/porous low-k (K<2.4) interconnect
This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% for EUV PR. Furthermore, the influence of LWR on reliability was evaluated on 45nm line-width test vehicle. A boost of 10 times Time Dependent Dielectric Breakdown (TDDB) and 2 times Eelectrical Migration (EM) was demonstrated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
