Electrical performances and quality investigations of integrated bonded structures and TSVs for 3D interconnects

K. N. Chen, Y. J. Chang, C. Ko, S. Hsu, H. Y. Chen, C. Hsiao, T. Yu, Y. -. Chen, W. Lo
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Abstract

The integration of TSVs and bonded structures is an important topic in 3D integration. In this study, fine Cu TSVs and various bonded structures, including Cu/Sn micro-bumps, Cu bond pads, and Cu alloy structures, are integrated and demonstrated. Electrical performances, morphology investigations, and reliability investigations of TSVs, bonded bumps/pads, and the integrated structures are studied. For a wellfabricated 3D interconnect structure, excellent electrical performance and mechanical strength with stable reliability behavior can be achieved.
三维互连用集成键合结构和tsv的电性能和质量研究
tsv与键合结构的集成是三维集成中的一个重要课题。在本研究中,集成和展示了精细的Cu tsv和各种键合结构,包括Cu/Sn微凸起、Cu键合垫和Cu合金结构。研究了tsv、粘结凸点/焊盘和集成结构的电学性能、形貌研究和可靠性研究。对于精心制作的三维互连结构,可以获得优异的电气性能和机械强度,具有稳定的可靠性行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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